Vishay SQ Rugged Type P-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 SQD19P06-60L_GE3

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Subtotal (1 pack of 10 units)*

R 205,44

(exc. VAT)

R 236,26

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 240R 20.544R 205.44
250 - 490R 20.03R 200.30
500 - 990R 19.429R 194.29
1000 - 1990R 18.652R 186.52
2000 +R 17.906R 179.06

*price indicative

Packaging Options:
RS stock no.:
819-3936
Mfr. Part No.:
SQD19P06-60L_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

60V

Series

SQ Rugged

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.5V

Typical Gate Charge Qg @ Vgs

27nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

46W

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Height

2.38mm

Width

6.22 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
TW

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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