Vishay SQ Rugged Type P-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 SQD19P06-60L_GE3
- RS stock no.:
- 819-3936
- Mfr. Part No.:
- SQD19P06-60L_GE3
- Manufacturer:
- Vishay
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Subtotal (1 pack of 10 units)*
R 199,81
(exc. VAT)
R 229,78
(inc. VAT)
Add 80 units to get free delivery
In Stock
- 150 unit(s) ready to ship from another location
- Plus 9,970 unit(s) shipping from 25 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 240 | R 19.981 | R 199.81 |
| 250 - 490 | R 19.481 | R 194.81 |
| 500 - 990 | R 18.897 | R 188.97 |
| 1000 - 1990 | R 18.141 | R 181.41 |
| 2000 + | R 17.415 | R 174.15 |
*price indicative
- RS stock no.:
- 819-3936
- Mfr. Part No.:
- SQD19P06-60L_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 46W | |
| Forward Voltage Vf | -1.5V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 46W | ||
Forward Voltage Vf -1.5V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Height 2.38mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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