Vishay SQ Rugged Type P-Channel MOSFET, 50 A, 30 V Enhancement, 3-Pin TO-252 SQD45P03-12_GE3
- RS stock no.:
- 819-3933
- Mfr. Part No.:
- SQD45P03-12_GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 270,02
(exc. VAT)
R 310,52
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 2,620 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 240 | R 27.002 | R 270.02 |
| 250 - 490 | R 26.327 | R 263.27 |
| 500 - 990 | R 25.537 | R 255.37 |
| 1000 - 1990 | R 24.516 | R 245.16 |
| 2000 + | R 23.535 | R 235.35 |
*price indicative
- RS stock no.:
- 819-3933
- Mfr. Part No.:
- SQD45P03-12_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | SQ Rugged | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.017Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55.3nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 71W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series SQ Rugged | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.017Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55.3nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 71W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Width 6.22mm | ||
Length 6.73mm | ||
Height 2.38mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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