Vishay SQ Rugged Type P-Channel MOSFET, 50 A, 30 V Enhancement, 3-Pin TO-252 SQD45P03-12_GE3
- RS stock no.:
- 819-3933
- Mfr. Part No.:
- SQD45P03-12_GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
R 275,40
(exc. VAT)
R 316,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 2,870 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 240 | R 27.54 | R 275.40 |
| 250 - 490 | R 26.852 | R 268.52 |
| 500 - 990 | R 26.046 | R 260.46 |
| 1000 - 1990 | R 25.004 | R 250.04 |
| 2000 + | R 24.004 | R 240.04 |
*price indicative
- RS stock no.:
- 819-3933
- Mfr. Part No.:
- SQD45P03-12_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | SQ Rugged | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.017Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 71W | |
| Typical Gate Charge Qg @ Vgs | 55.3nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series SQ Rugged | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.017Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 71W | ||
Typical Gate Charge Qg @ Vgs 55.3nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 6.73mm | ||
Height 2.38mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD19P06-60L_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 12 V Enhancement, 3-Pin SOT-23
- Vishay SQ Rugged Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay SQ Rugged Type P-Channel MOSFET 12 V Enhancement, 3-Pin SOT-23 SQ2315ES-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SQ2301ES-T1-GE3
- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC