P-Channel MOSFET, 2.2 A, 20 V, 3-Pin SOT-23 Vishay SQ2301ES-T1-GE3
- RS stock no.:
- 819-3908
- Mfr. Part No.:
- SQ2301ES-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)**
R 157 80
(exc. VAT)
R 181 40
(inc. VAT)
2880 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
|---|---|---|
| 20 - 280 | R 7,89 | R 157,80 |
| 300 - 580 | R 7,693 | R 153,86 |
| 600 - 1480 | R 7,462 | R 149,24 |
| 1500 - 2980 | R 7,163 | R 143,26 |
| 3000 + | R 6,877 | R 137,54 |
**price indicative
- RS stock no.:
- 819-3908
- Mfr. Part No.:
- SQ2301ES-T1-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | SQ Rugged | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.45V | |
| Maximum Power Dissipation | 3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 5 nC @ 4.5 V | |
| Length | 3.04mm | |
| Transistor Material | Si | |
| Height | 1.02mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.2 A | ||
Maximum Drain Source Voltage 20 V | ||
Series SQ Rugged | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.45V | ||
Maximum Power Dissipation 3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 5 nC @ 4.5 V | ||
Length 3.04mm | ||
Transistor Material Si | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
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