Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3

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Subtotal (1 pack of 20 units)*

R 240,50

(exc. VAT)

R 276,58

(inc. VAT)

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Last RS stock
  • Final 4,320 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
20 - 280R 12.025R 240.50
300 - 580R 11.724R 234.48
600 - 1480R 11.373R 227.46
1500 - 2980R 10.918R 218.36
3000 +R 10.481R 209.62

*price indicative

Packaging Options:
RS stock no.:
814-1323
Mfr. Part No.:
SISS27DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

57W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

92nC

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Width

3.3 mm

Standards/Approvals

No

Length

3.3mm

Height

0.78mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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