Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

RS stock no.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 20 units)**

R 283 44

(exc. VAT)

R 325 96

(inc. VAT)

9700 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Pack**
20 - 80	R 14,172	R 283,44
100 - 480	R 13,817	R 276,34
500 - 1480	R 13,403	R 268,06
1500 - 2480	R 12,867	R 257,34
2500 +	R 12,352	R 247,04

**price indicative

RS stock no.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Manufacturer:: Vishay

Si4599DY, N- and P-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.7 A, 6.8 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	42.5 mΩ, 62 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3 W, 3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	4mm
Typical Gate Charge @ Vgs	11.7 nC @ 10 V, 25 nC @ 10 V
Length	5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Height	1.55mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

FREE delivery for orders over R 1500

Dual N/P-Channel MOSFET, Vishay Semiconductor

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