MPN

Vishay Isolated Si4599DY 2 Type N, Type P-Channel MOSFET, 6.8 A, 40 V Enhancement, 8-Pin SOIC SI4599DY-T1-GE3

RS stock no.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Manufacturer:: Vishay

Vishay Isolated Si4599DY 2 Type N, Type P-Channel MOSFET, 6.8 A, 40 V Enhancement, 8-Pin SOIC SI4599DY-T1-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 20 units)*

R 307,16

(exc. VAT)

R 353,24

(inc. VAT)

FREE delivery for orders over R 1,500.00

Being discontinued

Final 9,520 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
20 - 80	R 15.358	R 307.16
100 - 480	R 14.974	R 299.48
500 - 1480	R 14.525	R 290.50
1500 - 2480	R 13.944	R 278.88
2500 +	R 13.386	R 267.72

*price indicative

RS stock no.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	6.8A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOIC
	Series	Si4599DY
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.045Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	25nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	3.1W
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Height	1.55mm
	Length	5mm
	Width	4 mm
	Standards/Approvals	JEDEC JS709A, RoHS
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 6.8A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOIC
	Series Si4599DY
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.045Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 25nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 3.1W
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Height 1.55mm
	Length 5mm
	Width 4 mm
	Standards/Approvals JEDEC JS709A, RoHS
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Isolated Si4599DY 2 Type N, Type P-Channel MOSFET, 6.8 A, 40 V Enhancement, 8-Pin SOIC SI4599DY-T1-GE3

FREE delivery for orders over R 1,500.00

Dual N/P-Channel MOSFET, Vishay Semiconductor

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