Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3
- RS stock no.:
- 812-3136
- Mfr. Part No.:
- SI2367DS-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 tape of 50 units)*
R 361,45
(exc. VAT)
R 415,65
(inc. VAT)
Add 250 units to get free delivery
Last RS stock
- Final 2,600 unit(s), ready to ship from another location
Units | Per unit | Per Tape* |
|---|---|---|
| 50 - 250 | R 7.229 | R 361.45 |
| 300 - 550 | R 7.048 | R 352.40 |
| 600 - 1450 | R 6.837 | R 341.85 |
| 1500 - 2950 | R 6.563 | R 328.15 |
| 3000 + | R 6.301 | R 315.05 |
*price indicative
- RS stock no.:
- 812-3136
- Mfr. Part No.:
- SI2367DS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Si2367DS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.066Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Si2367DS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.066Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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