Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3

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Subtotal (1 tape of 50 units)*

R 107,40

(exc. VAT)

R 123,50

(inc. VAT)

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Last RS stock
  • Final 1,350 unit(s), ready to ship from another location

Units
Per unit
Per Tape*
50 - 250R 2.148R 107.40
300 - 550R 2.094R 104.70
600 - 1450R 2.031R 101.55
1500 - 2950R 1.95R 97.50
3000 +R 1.872R 93.60

*price indicative

Packaging Options:
RS stock no.:
812-3136
Mfr. Part No.:
SI2367DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3.8A

Maximum Drain Source Voltage Vds

20V

Series

Si2367DS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.066Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.7W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

9nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Length

3.04mm

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


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