Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 tape of 50 units)*

R 371,60

(exc. VAT)

R 427,35

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 2,600 unit(s), ready to ship from another location
Units
Per unit
Per Tape*
50 - 250R 7.432R 371.60
300 - 550R 7.246R 362.30
600 - 1450R 7.029R 351.45
1500 - 2950R 6.748R 337.40
3000 +R 6.478R 323.90

*price indicative

Packaging Options:
RS stock no.:
812-3136
Mfr. Part No.:
SI2367DS-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3.8A

Maximum Drain Source Voltage Vds

20V

Series

Si2367DS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.066Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9nC

Maximum Gate Source Voltage Vgs

8 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1.7W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

1.4 mm

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Height

1.02mm

Length

3.04mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links