N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

RS stock no.:: 804-7603
Mfr. Part No.:: IXFN80N60P3
Manufacturer:: IXYS

N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

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Bulk discount available

Price (Excl VAT) Each

R 618,45

(exc. VAT)

R 711,22

(inc. VAT)

On back order for despatch 2025/05/06

Not Available for premium delivery

RS stock no.:: 804-7603
Mfr. Part No.:: IXFN80N60P3
Manufacturer:: IXYS

IXFN80N60P3, Polar3 HiPerFET, Power MOSFET, N-Channel Enhancement Mode, Fast Intrinsic Rectifie
ESD Control Selection Guide V1

	Units	Per unit
	1 - 1	R 618,45
	2 - 4	R 602,99
	5 - 9	R 584,90
	10 - 29	R 561,50
	30 +	R 539,04

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	600 V
Package Type	SOT-227
Series	HiperFET, Polar3
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	960 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Typical Gate Charge @ Vgs	190 nC @ 10 V
Width	25.07mm
Length	38.23mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	9.6mm

N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series