N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

RS stock no.:: 168-4759
Mfr. Part No.:: IXFN80N60P3
Manufacturer:: IXYS

N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

Image representative of range

Price (Excl VAT) Each (In a Tube of 10)

R 570,872

(exc. VAT)

R 656,503

(inc. VAT)

On back order for despatch 2025/05/06

Not Available for premium delivery

Units	Per unit	Per Tube*
10 +	R 570,872	R 5 708,72

*price indicative

RS stock no.:: 168-4759
Mfr. Part No.:: IXFN80N60P3
Manufacturer:: IXYS

IXFN80N60P3, Polar3 HiPerFET, Power MOSFET, N-Channel Enhancement Mode, Fast Intrinsic Rectifie
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	600 V
Series	HiperFET, Polar3
Package Type	SOT-227
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	960 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	38.23mm
Typical Gate Charge @ Vgs	190 nC @ 10 V
Number of Elements per Chip	1
Width	25.07mm
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227 IXYS IXFN80N60P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series