IXYS HiperFET, Polar3 Type N-Channel MOSFET, 66 A, 600 V Enhancement, 4-Pin SOT-227 IXFN80N60P3

Subtotal (1 tube of 10 units)*

R 5 169,62

(exc. VAT)

R 5 945,06

(inc. VAT)

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Units
Per unit
Per Tube*
10 +R 516.962R 5,169.62

*price indicative

RS stock no.:
168-4759
Mfr. Part No.:
IXFN80N60P3
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

600V

Series

HiperFET, Polar3

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

960W

Typical Gate Charge Qg @ Vgs

190nC

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

38.23mm

Width

25.07 mm

Height

9.6mm

Automotive Standard

No

COO (Country of Origin):
US

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