onsemi NTR0202PL Type P-Channel MOSFET, 400 mA, 20 V Enhancement, 3-Pin SOT-23 NTR0202PLT1G
- RS stock no.:
- 791-6299
- Mfr. Part No.:
- NTR0202PLT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 312,80
(exc. VAT)
R 359,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,950 unit(s) shipping from 29 December 2025
- Plus 3,000 unit(s) shipping from 03 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 6.256 | R 312.80 |
| 100 - 200 | R 6.10 | R 305.00 |
| 250 - 450 | R 5.917 | R 295.85 |
| 500 - 950 | R 5.68 | R 284.00 |
| 1000 + | R 5.453 | R 272.65 |
*price indicative
- RS stock no.:
- 791-6299
- Mfr. Part No.:
- NTR0202PLT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | NTR0202PL | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1V | |
| Typical Gate Charge Qg @ Vgs | 2.18nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1.01mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series NTR0202PL | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1V | ||
Typical Gate Charge Qg @ Vgs 2.18nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1.01mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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