DiodesZetex Type P-Channel MOSFET, 900 mA, 20 V Enhancement, 3-Pin SOT-23 ZXM61P02FTA
- RS stock no.:
- 154-942
- Mfr. Part No.:
- ZXM61P02FTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (25 units, in packs of 25)*
R 201,70
(exc. VAT)
R 231,95
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 25 unit(s) ready to ship from another location
- Plus 44,800 unit(s) shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 8.068 | R 201.70 |
| 125 - 225 | R 7.866 | R 196.65 |
| 250 - 475 | R 7.63 | R 190.75 |
| 500 - 1225 | R 7.325 | R 183.13 |
| 1250 + | R 7.032 | R 175.80 |
*price indicative
- RS stock no.:
- 154-942
- Mfr. Part No.:
- ZXM61P02FTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 900mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Maximum Power Dissipation Pd | 806mW | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.95V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.05mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 900mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Maximum Power Dissipation Pd 806mW | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.95V | ||
Maximum Operating Temperature 150°C | ||
Length 3.05mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.4mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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