Vishay SiA461DJ Type P-Channel MOSFET, 12 A, 20 V Enhancement, 6-Pin SC-70 SIA461DJ-T1-GE3
- RS stock no.:
- 787-9291
- Mfr. Part No.:
- SIA461DJ-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 tape of 10 units)*
R 140,05
(exc. VAT)
R 161,06
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,630 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 40 | R 14.005 | R 140.05 |
| 50 - 240 | R 13.655 | R 136.55 |
| 250 - 990 | R 13.245 | R 132.45 |
| 1000 - 2990 | R 12.715 | R 127.15 |
| 3000 + | R 12.206 | R 122.06 |
*price indicative
- RS stock no.:
- 787-9291
- Mfr. Part No.:
- SIA461DJ-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | SiA461DJ | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 17.9W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 1.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series SiA461DJ | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 17.9W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 1.7mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
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