Vishay SiA471DJ Type P-Channel MOSFET, 30.3 A, 30 V Enhancement, 6-Pin SC-70 SiA471DJ-T1-GE3
- RS stock no.:
- 188-5019
- Distrelec Article No.:
- 304-38-845
- Mfr. Part No.:
- SiA471DJ-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 76,875
(exc. VAT)
R 88,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 2,725 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 3.075 | R 76.88 |
| 50 - 75 | R 2.998 | R 74.95 |
| 100 - 475 | R 2.908 | R 72.70 |
| 500 - 975 | R 2.792 | R 69.80 |
| 1000 + | R 2.68 | R 67.00 |
*price indicative
- RS stock no.:
- 188-5019
- Distrelec Article No.:
- 304-38-845
- Mfr. Part No.:
- SiA471DJ-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 30.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-70 | |
| Series | SiA471DJ | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18.5nC | |
| Maximum Power Dissipation Pd | 19.2W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Length | 2.15mm | |
| Width | 2.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 30.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-70 | ||
Series SiA471DJ | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18.5nC | ||
Maximum Power Dissipation Pd 19.2W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Length 2.15mm | ||
Width 2.15 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen IV p-channel power MOSFET
Thermally enhanced PowerPAK® SC-70 package
Very low RDS(on) x area minimizes power loss on limited PCB real estate
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