Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

RS stock no.:: 780-0605
Mfr. Part No.:: NTJD1155LT1G
Manufacturer:: onsemi

Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

Image representative of range

Bulk discount available

Subtotal (1 tape of 20 units)**

R 117 14

(exc. VAT)

R 134 72

(inc. VAT)

2500 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Tape**
20 - 20	R 5,857	R 117,14
40 - 80	R 5,71	R 114,20
100 - 180	R 5,539	R 110,78
200 - 380	R 5,317	R 106,34
400 +	R 5,105	R 102,10

**price indicative

RS stock no.:: 780-0605
Mfr. Part No.:: NTJD1155LT1G
Manufacturer:: onsemi

NTJD1155L Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.3 A
Maximum Drain Source Voltage	8 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	320 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Maximum Power Dissipation	400 mW
Transistor Configuration	N+P Loadswitch
Maximum Gate Source Voltage	+8 V
Length	2.2mm
Number of Elements per Chip	2
Transistor Material	Si
Width	1.35mm
Maximum Operating Temperature	+150 °C
Height	1mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

FREE delivery for orders over R 1500

Dual N/P-Channel MOSFET, ON Semiconductor

Features and Benefits:

Applications:

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