DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 1.3 A, 30 V Enhancement, 6-Pin SC-88 DMN3190LDW-7
- RS stock no.:
- 827-0480
- Mfr. Part No.:
- DMN3190LDW-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 50 units)*
R 81,55
(exc. VAT)
R 93,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,150 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 1.631 | R 81.55 |
| 250 - 450 | R 1.591 | R 79.55 |
| 500 - 1200 | R 1.543 | R 77.15 |
| 1250 - 2450 | R 1.481 | R 74.05 |
| 2500 + | R 1.422 | R 71.10 |
*price indicative
- RS stock no.:
- 827-0480
- Mfr. Part No.:
- DMN3190LDW-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 335mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 2.2mm | |
| Height | 1mm | |
| Standards/Approvals | J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 335mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 400mW | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 2.2mm | ||
Height 1mm | ||
Standards/Approvals J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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