MPN

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 1.3 A, 30 V Enhancement, 6-Pin SC-88 DMN3190LDW-7

RS stock no.:: 827-0480
Mfr. Part No.:: DMN3190LDW-7
Manufacturer:: DiodesZetex

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 1.3 A, 30 V Enhancement, 6-Pin SC-88 DMN3190LDW-7

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Bulk discount available

Subtotal (1 pack of 50 units)*

R 103,85

(exc. VAT)

R 119,45

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

5,350 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
50 - 200	R 2.077	R 103.85
250 - 450	R 2.025	R 101.25
500 - 1200	R 1.964	R 98.20
1250 - 2450	R 1.885	R 94.25
2500 +	R 1.81	R 90.50

*price indicative

RS stock no.:: 827-0480
Mfr. Part No.:: DMN3190LDW-7
Manufacturer:: DiodesZetex

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	1.3A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SC-88
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	335mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	150°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	400mW
	Typical Gate Charge Qg @ Vgs	0.9nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Height	1mm
	Length	2.2mm
	Standards/Approvals	J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101
	Width	1.35 mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q200, AEC-Q100, AEC-Q101

	Select all
	Brand DiodesZetex
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 1.3A
	Maximum Drain Source Voltage Vds 30V
	Package Type SC-88
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 335mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature 150°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 400mW
	Typical Gate Charge Qg @ Vgs 0.9nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Height 1mm
	Length 2.2mm
	Standards/Approvals J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101
	Width 1.35 mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 1.3 A, 30 V Enhancement, 6-Pin SC-88 DMN3190LDW-7

FREE delivery for orders over R 1,500.00

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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