IXYS HiperFET, Q-Class N-Channel MOSFET, 27 A, 800 V Enhancement, 3-Pin TO-264 IXFK27N80Q
- RS stock no.:
- 711-5382
- Distrelec Article No.:
- 302-53-347
- Mfr. Part No.:
- IXFK27N80Q
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
R 510,15
(exc. VAT)
R 586,67
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 12 unit(s) ready to ship from another location
- Plus 118 unit(s) shipping from 03 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | R 510.15 |
| 2 - 4 | R 497.40 |
| 5 - 9 | R 482.48 |
| 10 - 19 | R 463.18 |
| 20 + | R 444.65 |
*price indicative
- RS stock no.:
- 711-5382
- Distrelec Article No.:
- 302-53-347
- Mfr. Part No.:
- IXFK27N80Q
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-264 | |
| Series | HiperFET, Q-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500W | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.13mm | |
| Standards/Approvals | No | |
| Length | 19.96mm | |
| Height | 26.16mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-264 | ||
Series HiperFET, Q-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500W | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Width 5.13mm | ||
Standards/Approvals No | ||
Length 19.96mm | ||
Height 26.16mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS HiperFET 27 A 3-Pin TO-264
- IXYS HiperFET 48 A 3-Pin TO-264
- IXYS HiperFET 64 A 3-Pin TO-264 IXFK64N50Q3
- IXYS HiperFET 24 A 3-Pin TO-264 IXFK24N100Q3
- IXYS HiperFET 32 A 3-Pin TO-264 IXFK32N100Q3
- IXYS HiperFET 100 A 3-Pin TO-264 IXFK100N65X2
- IXYS HiperFET 48 A 3-Pin TO-264 IXFK48N60Q3
- IXYS HiperFET 32 A 3-Pin PLUS247 IXFX32N80Q3