IXYS Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-264 IXFK48N60Q3
- RS stock no.:
- 801-1415
- Mfr. Part No.:
- IXFK48N60Q3
- Manufacturer:
- IXYS
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Bulk discount available
Subtotal (1 unit)*
R 382,21
(exc. VAT)
R 439,54
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 25 September 2026
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Units | Per unit |
|---|---|
| 1 - 4 | R 382.21 |
| 5 - 9 | R 372.65 |
| 10 - 24 | R 361.47 |
| 25 - 74 | R 347.01 |
| 75 + | R 333.13 |
*price indicative
- RS stock no.:
- 801-1415
- Mfr. Part No.:
- IXFK48N60Q3
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Power Dissipation Pd | 1kW | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 19.96mm | |
| Height | 26.16mm | |
| Width | 5.13 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Power Dissipation Pd 1kW | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 19.96mm | ||
Height 26.16mm | ||
Width 5.13 mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
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- IXYS HiperFET 32 A 3-Pin ISOPLUS247 IXFR48N60Q3
- IXYS HiperFET 82 A 3-Pin PLUS264 IXFB82N60Q3
- IXYS HiperFET 64 A 3-Pin PLUS247 IXFX64N50Q3