IXYS Single HiperFET, Q3-Class 1 Type N, Type N-Channel MOSFET, 15 A, 1000 V Enhancement, 3-Pin TO-247 IXFH15N100Q3
- RS stock no.:
- 920-0969
- Mfr. Part No.:
- IXFH15N100Q3
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 8 361,84
(exc. VAT)
R 9 616,11
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 278.728 | R 8,361.84 |
| 60 - 90 | R 271.759 | R 8,152.77 |
| 120 - 270 | R 263.607 | R 7,908.21 |
| 300 - 570 | R 253.062 | R 7,591.86 |
| 600 + | R 242.94 | R 7,288.20 |
*price indicative
- RS stock no.:
- 920-0969
- Mfr. Part No.:
- IXFH15N100Q3
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 1000V | |
| Package Type | TO-247 | |
| Series | HiperFET, Q3-Class | |
| Mount Type | Through Hole, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.05Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 690W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.26mm | |
| Width | 5.3 mm | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 1000V | ||
Package Type TO-247 | ||
Series HiperFET, Q3-Class | ||
Mount Type Through Hole, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.05Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 690W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Height 16.26mm | ||
Width 5.3 mm | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS HiperFET 15 A 3-Pin TO-247 IXFH15N100Q3
- IXYS HiperFET 27 A 3-Pin TO-264
- IXYS HiperFET 27 A 3-Pin TO-264 IXFK27N80Q
- IXYS HiperFET 18 A 3-Pin TO-268 IXFT18N100Q3
- IXYS HiperFET 32 A 3-Pin ISOPLUS247 IXFR48N60Q3
- IXYS HiperFET 24 A 3-Pin TO-264
- IXYS HiperFET 64 A 3-Pin PLUS247
- IXYS HiperFET 48 A 3-Pin TO-264