IXYS Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-264
- RS stock no.:
- 920-0978
- Mfr. Part No.:
- IXFK48N60Q3
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
Subtotal (1 tube of 25 units)*
R 8 490,20
(exc. VAT)
R 9 763,725
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 21 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | R 339.608 | R 8,490.20 |
| 50 - 75 | R 331.118 | R 8,277.95 |
| 100 - 225 | R 321.184 | R 8,029.60 |
| 250 - 475 | R 308.337 | R 7,708.43 |
| 500 + | R 296.003 | R 7,400.08 |
*price indicative
- RS stock no.:
- 920-0978
- Mfr. Part No.:
- IXFK48N60Q3
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1kW | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 26.16mm | |
| Width | 5.13 mm | |
| Length | 19.96mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1kW | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 26.16mm | ||
Width 5.13 mm | ||
Length 19.96mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
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- IXYS HiperFET 64 A 3-Pin TO-264 IXFK64N50Q3
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