IXYS HiperFET, Q-Class Type N-Channel MOSFET, 27 A, 800 V Enhancement, 3-Pin TO-264

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Subtotal (1 tube of 25 units)*

R 14 372,375

(exc. VAT)

R 16 528,225

(inc. VAT)

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In Stock
  • 100 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
25 - 25R 574.895R 14,372.38
50 - 75R 560.523R 14,013.08
100 - 225R 543.707R 13,592.68
250 - 475R 521.959R 13,048.98
500 +R 501.08R 12,527.00

*price indicative

RS stock no.:
920-0874
Mfr. Part No.:
IXFK27N80Q
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

800V

Series

HiperFET, Q-Class

Package Type

TO-264

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

320mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

500W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

170nC

Maximum Operating Temperature

150°C

Height

26.16mm

Length

19.96mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Q Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

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