IXYS Type N-Channel MOSFET, 27 A, 800 V Enhancement, 3-Pin TO-264

Image representative of range

Bulk discount available

Subtotal (1 tube of 25 units)*

R 14 725,875

(exc. VAT)

R 16 934,75

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 100 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
25 - 25R 589.035R 14,725.88
50 - 75R 574.309R 14,357.73
100 - 225R 557.08R 13,927.00
250 - 475R 534.797R 13,369.93
500 +R 513.405R 12,835.13

*price indicative

RS stock no.:
920-0874
Mfr. Part No.:
IXFK27N80Q
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-264

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

320mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

170nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

500W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

19.96mm

Width

5.13 mm

Height

26.16mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Q Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links