Vishay P-Channel MOSFET Transistor, 5.1 A, 12 V, 3-Pin SOT-23 SI2333CDS-T1-GE3
- RS stock no.:
- 710-3260
- Mfr. Part No.:
- SI2333CDS-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
R 55,73
(exc. VAT)
R 64,09
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 5.573 | R 55.73 |
| 50 - 90 | R 5.35 | R 53.50 |
| 100 - 240 | R 5.136 | R 51.36 |
| 250 - 490 | R 4.931 | R 49.31 |
| 500 + | R 4.733 | R 47.33 |
*price indicative
- RS stock no.:
- 710-3260
- Mfr. Part No.:
- SI2333CDS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 5.1 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 35 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.25 W | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Width | 1.4mm | |
| Typical Gate Charge @ Vgs | 15 nC @ 4.5 V, 9 nC @ 2.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.04mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 5.1 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.25 W | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 15 nC @ 4.5 V, 9 nC @ 2.5 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay P-Channel MOSFET Transistor 20 V, 3-Pin SOT-23 SI2301BDS-T1-E3
- Vishay Type P-Channel MOSFET 30 V, 3-Pin SOT-23 SI2393DS-T1-GE3
- Vishay Si2377EDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay SQ Rugged Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay Si2377EDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2377EDS-T1-GE3
- Vishay Si2301CDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2347DS-T1-GE3
- Vishay Si2323DDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2323DDS-T1-GE3
