P-Channel MOSFET Transistor, 5.1 A, 12 V, 3-Pin SOT-23 Vishay SI2333CDS-T1-GE3

RS stock no.:: 710-3260
Mfr. Part No.:: SI2333CDS-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET Transistor, 5.1 A, 12 V, 3-Pin SOT-23 Vishay SI2333CDS-T1-GE3

Bulk discount available

Price (Excl VAT) Each (In a Pack of 10)

R 5,573

(exc. VAT)

R 6,409

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
10 - 40	R 5,573	R 55,73
50 - 90	R 5,35	R 53,50
100 - 240	R 5,136	R 51,36
250 - 490	R 4,931	R 49,31
500 +	R 4,733	R 47,33

**price indicative

Alternative

P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 Vishay SI2333DDS-T1-GE3

R 2,284

Each (In a Pack of 10)

RS stock no.: 787-9222

RS stock no.:: 710-3260
Mfr. Part No.:: SI2333CDS-T1-GE3
Manufacturer:: Vishay

Trans MOSFET P-CH 12V 5.1A

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	5.1 A
Maximum Drain Source Voltage	12 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	35 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.25 W
Maximum Gate Source Voltage	-8 V, +8 V
Width	1.4mm
Length	3.04mm
Typical Gate Charge @ Vgs	15 nC @ 4.5 V, 9 nC @ 2.5 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Height	1.02mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET Transistor, 5.1 A, 12 V, 3-Pin SOT-23 Vishay SI2333CDS-T1-GE3

Alternative

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor