Vishay Si2333DDS Type P-Channel MOSFET, 6 A, 12 V Enhancement, 3-Pin SOT-23 SI2333DDS-T1-GE3
- RS stock no.:
- 787-9222
- Distrelec Article No.:
- 304-02-277
- Mfr. Part No.:
- SI2333DDS-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 75,85
(exc. VAT)
R 87,23
(inc. VAT)
Add 210 units to get free delivery
Last RS stock
- 470 left, ready to ship from another location
- Final 41,590 unit(s) shipping from 19 February 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 7.585 | R 75.85 |
| 50 - 240 | R 7.395 | R 73.95 |
| 250 - 990 | R 7.173 | R 71.73 |
| 1000 - 2990 | R 6.886 | R 68.86 |
| 3000 + | R 6.611 | R 66.11 |
*price indicative
- RS stock no.:
- 787-9222
- Distrelec Article No.:
- 304-02-277
- Mfr. Part No.:
- SI2333DDS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | Si2333DDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 19Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.7W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series Si2333DDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 19Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.7W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
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