Vishay Si2301CDS Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3
- RS stock no.:
- 710-3238
- Mfr. Part No.:
- SI2301CDS-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 143,18
(exc. VAT)
R 164,66
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- 300 left, ready to ship from another location
- Final 300 unit(s) shipping from 12 October 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 7.159 | R 143.18 |
| 100 - 180 | R 6.98 | R 139.60 |
| 200 - 380 | R 6.77 | R 135.40 |
| 400 - 980 | R 6.499 | R 129.98 |
| 1000 + | R 6.239 | R 124.78 |
*price indicative
- RS stock no.:
- 710-3238
- Mfr. Part No.:
- SI2301CDS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Si2301CDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 112mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 860mW | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Si2301CDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 112mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 860mW | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si2301CDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-E3
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Si2343CDS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23