Vishay TrenchFET Type P-Channel MOSFET, 3 A, 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

R 186,05

(exc. VAT)

R 213,95

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,525 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 25R 7.442R 186.05
50 - 75R 7.256R 181.40
100 - 225R 7.039R 175.98
250 - 975R 6.757R 168.93
1000 +R 6.487R 162.18

*price indicative

Packaging Options:
RS stock no.:
228-2814
Mfr. Part No.:
Si2387DS-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

6.8nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET Gen IV P-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

100 % Rg and UIS tested

Related links