Vishay TrenchFET Type P-Channel MOSFET, 3 A, 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3

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Subtotal (1 pack of 25 units)*

R 315,90

(exc. VAT)

R 363,275

(inc. VAT)

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  • Shipping from 30 June 2027
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Units
Per unit
Per Pack*
25 - 25R 12.636R 315.90
50 - 75R 12.32R 308.00
100 - 225R 11.95R 298.75
250 - 975R 11.472R 286.80
1000 +R 11.014R 275.35

*price indicative

Packaging Options:
RS stock no.:
228-2814
Mfr. Part No.:
Si2387DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

6.8nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Automotive Standard

No

The Vishay TrenchFET Gen IV P-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

100 % Rg and UIS tested

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