Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 2 units)*

R 122,40

(exc. VAT)

R 140,76

(inc. VAT)

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Units
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Per Pack*
2 - 8R 61.20R 122.40
10 - 18R 59.67R 119.34
20 - 38R 57.88R 115.76
40 - 98R 55.565R 111.13
100 +R 53.34R 106.68

*price indicative

RS stock no.:
688-7213
Mfr. Part No.:
IRLB3036PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

270A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

91nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

380W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

9.02mm

Standards/Approvals

No

Width

4.83 mm

Length

10.67mm

Automotive Standard

No

Distrelec Product Id

304-43-458

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