Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V Enhancement, 3-Pin TO-220 IRF1018EPBF

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Subtotal (1 tube of 50 units)*

R 740,65

(exc. VAT)

R 851,75

(inc. VAT)

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  • 200 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
50 +R 14.813R 740.65

*price indicative

RS stock no.:
145-9197
Mfr. Part No.:
IRF1018EPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

79A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

46nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.67mm

Standards/Approvals

No

Height

9.02mm

Width

4.83 mm

Automotive Standard

No

COO (Country of Origin):
MX

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