Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V TO-220

Image representative of range

Bulk discount available

Subtotal (1 reel of 800 units)*

R 8 304,00

(exc. VAT)

R 9 552,00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,400 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 - 800R 10.38R 8,304.00
1600 - 2400R 10.12R 8,096.00
3200 - 5600R 9.816R 7,852.80
6400 +R 9.424R 7,539.20

*price indicative

RS stock no.:
257-9267
Mfr. Part No.:
IRF1018ESTRLPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

79A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

8.4mΩ

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

46nC

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon IRF series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.

Improved gate, avalanche and dynamic dv/dt ruggedness

Fully characterized capacitance and avalanche SOA

Enhanced body diode dV/dt and dI/dt capability

Related links