Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V TO-220

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Subtotal (1 reel of 800 units)*

R 8 083,20

(exc. VAT)

R 9 296,00

(inc. VAT)

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Units
Per unit
Per Reel*
800 - 800R 10.104R 8,083.20
1600 - 2400R 9.851R 7,880.80
3200 - 5600R 9.556R 7,644.80
6400 +R 9.174R 7,339.20

*price indicative

RS stock no.:
257-9267
Mfr. Part No.:
IRF1018ESTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

79A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

8.4mΩ

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

46nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon IRF series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.

Improved gate, avalanche and dynamic dv/dt ruggedness

Fully characterized capacitance and avalanche SOA

Enhanced body diode dV/dt and dI/dt capability

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