Vishay SUD23N06-31 Type N-Channel MOSFET, 23 A, 60 V Enhancement, 3-Pin TO-252 SUD23N06-31-GE3
- RS stock no.:
- 636-5397
- Mfr. Part No.:
- SUD23N06-31-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 95,65
(exc. VAT)
R 110,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,545 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 19.13 | R 95.65 |
| 25 - 95 | R 18.652 | R 93.26 |
| 100 - 245 | R 18.092 | R 90.46 |
| 250 - 495 | R 17.368 | R 86.84 |
| 500 + | R 16.674 | R 83.37 |
*price indicative
- RS stock no.:
- 636-5397
- Mfr. Part No.:
- SUD23N06-31-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SUD23N06-31 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.38mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SUD23N06-31 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.38mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay N-Channel MOSFET 60 V, 3-Pin DPAK SUD23N06-31-GE3
- onsemi N-Channel MOSFET 100 V, 3-Pin DPAK NTD6415ANLT4G
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin DPAK IRLR2703TRPBF
- STMicroelectronics STripFET N-Channel MOSFET 100 V, 3-Pin DPAK STD15NF10T4
- ROHM HP8 Dual N-Channel MOSFET 60 V, 8-Pin HSOP8 HP8KC6TB1
- Vishay N-Channel MOSFET 40 V, 8-Pin PowerPAK SO-8 SIR418DP-T1-GE3
- Vishay N-Channel MOSFET 60 V, 3-Pin SOT-23 SI2308BDS-T1-GE3
- Vishay N-Channel MOSFET 400 V, 3-Pin TO-247AC IRFP360PBF