Vishay SIA Type N-Channel MOSFET, 31 A, 40 V Enhancement, 7-Pin SC-70 SIA4446DJ-T1-GE3

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Subtotal (1 pack of 10 units)*

R 134,89

(exc. VAT)

R 155,12

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 13.489R 134.89
50 - 90R 13.152R 131.52
100 - 240R 12.757R 127.57
250 - 990R 12.247R 122.47
1000 +R 11.757R 117.57

*price indicative

Packaging Options:
RS stock no.:
279-9902
Mfr. Part No.:
SIA4446DJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

40V

Package Type

SC-70

Series

SIA

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.011Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±16 V

Maximum Power Dissipation Pd

19.2W

Typical Gate Charge Qg @ Vgs

19nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

2.05mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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