Vishay SIA Type N-Channel MOSFET, 31 A, 40 V Enhancement, 7-Pin SC-70 SIA4446DJ-T1-GE3

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Subtotal (1 pack of 10 units)*

R 138,28

(exc. VAT)

R 159,02

(inc. VAT)

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  • 5,970 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40R 13.828R 138.28
50 - 90R 13.482R 134.82
100 - 240R 13.078R 130.78
250 - 990R 12.555R 125.55
1000 +R 12.053R 120.53

*price indicative

Packaging Options:
RS stock no.:
279-9902
Mfr. Part No.:
SIA4446DJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

40V

Series

SIA

Package Type

SC-70

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.011Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

19.2W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±16 V

Typical Gate Charge Qg @ Vgs

19nC

Maximum Operating Temperature

150°C

Length

2.05mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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