Vishay 2N7002K N-Channel TrenchFET Power MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002K-T1-GE3
- RS stock no.:
- 787-9058
- Mfr. Part No.:
- 2N7002K-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 100 units)*
R 112,60
(exc. VAT)
R 129,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 25,400 unit(s) shipping from 13 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | R 1.126 | R 112.60 |
| 200 - 400 | R 1.097 | R 109.70 |
| 500 - 900 | R 1.065 | R 106.50 |
| 1000 - 2900 | R 1.022 | R 102.20 |
| 3000 + | R 0.981 | R 98.10 |
*price indicative
- RS stock no.:
- 787-9058
- Mfr. Part No.:
- 2N7002K-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002K | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.35W | |
| Typical Gate Charge Qg @ Vgs | 0.4nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Standards/Approvals | IEC 61249-2-21, JEDEC JS709A, RoHS | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002K | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.35W | ||
Typical Gate Charge Qg @ Vgs 0.4nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Standards/Approvals IEC 61249-2-21, JEDEC JS709A, RoHS | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
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