onsemi NTD6415ANL Type N-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-252 NTD6415ANLT4G
- RS stock no.:
- 802-1030
- Mfr. Part No.:
- NTD6415ANLT4G
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tape of 10 units)*
R 213,37
(exc. VAT)
R 245,38
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 110 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 10 | R 21.337 | R 213.37 |
| 20 - 90 | R 20.804 | R 208.04 |
| 100 - 240 | R 20.18 | R 201.80 |
| 250 - 490 | R 19.373 | R 193.73 |
| 500 + | R 18.598 | R 185.98 |
*price indicative
- RS stock no.:
- 802-1030
- Mfr. Part No.:
- NTD6415ANLT4G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTD6415ANL | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.38mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTD6415ANL | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.38mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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