Vishay IRFBE Type N-Channel Power MOSFET, 3.6 A, 900 V Enhancement, 3-Pin TO-220AB IRFBF30PBF
- RS stock no.:
- 542-9557
- Mfr. Part No.:
- IRFBF30PBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 57,05
(exc. VAT)
R 65,61
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1 unit(s) ready to ship from another location
- Plus 33 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | R 57.05 |
| 25 - 99 | R 55.62 |
| 100 - 249 | R 53.95 |
| 250 - 499 | R 51.79 |
| 500 + | R 49.72 |
*price indicative
- RS stock no.:
- 542-9557
- Mfr. Part No.:
- IRFBF30PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | TO-220AB | |
| Series | IRFBE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.7Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type TO-220AB | ||
Series IRFBE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.7Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS 2002/95/EC | ||
Height 9.01mm | ||
Length 10.41mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay N-Channel MOSFET 900 V, 3-Pin TO-220AB IRFBF30PBF
- Vishay N-Channel MOSFET 600 V, 3-Pin TO-220AB IRFBC30PBF
- Vishay N-Channel MOSFET 600 V, 3-Pin TO-220AB IRFBC30APBF
- Vishay N-Channel MOSFET 900 V, 3-Pin TO-220AB IRFBF20PBF
- onsemi QFET N-Channel MOSFET 900 V, 3-Pin TO-220AB FQP9N90C
- Vishay N-Channel MOSFET 600 V, 3-Pin D2PAK SIHFBC30AS-GE3
- Vishay N-Channel MOSFET 30 V, 3-Pin SOT-23 SI2304DDS-T1-GE3
- Vishay N-Channel MOSFET 600 V, 3-Pin TO-220AB IRFBC40PBF