Vishay IRFBC Type N-Channel MOSFET, 2.2 A, 600 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 542-9490
- Mfr. Part No.:
- IRFBC20PBF
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 unit)*
R 16,58
(exc. VAT)
R 19,07
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,000 unit(s) shipping from 20 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | R 16.58 |
| 25 - 99 | R 16.17 |
| 100 - 249 | R 15.68 |
| 250 - 499 | R 15.05 |
| 500 + | R 14.45 |
*price indicative
- RS stock no.:
- 542-9490
- Mfr. Part No.:
- IRFBC20PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IRFBC | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.4Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IRFBC | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.4Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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