Vishay IRF820 Type N-Channel Power MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220AB IRF820PBF
- RS stock no.:
- 543-0002
- Distrelec Article No.:
- 301-91-570
- Mfr. Part No.:
- IRF820PBF
- Manufacturer:
- Vishay
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R 31,20
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R 35,88
(inc. VAT)
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- 126 unit(s) ready to ship from another location
- Plus 418 unit(s) shipping from 31 August 2026
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Units | Per unit |
|---|---|
| 1 - 24 | R 31.20 |
| 25 - 99 | R 30.42 |
| 100 - 249 | R 29.51 |
| 250 - 499 | R 28.33 |
| 500 + | R 27.20 |
*price indicative
- RS stock no.:
- 543-0002
- Distrelec Article No.:
- 301-91-570
- Mfr. Part No.:
- IRF820PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF820 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF820 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Height 9.01mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
Vishay IRF820 Series Power MOSFET, 500V Drain-Source Voltage, 50W Power Dissipation - IRF820PBF
This power MOSFET is a high-voltage switching transistor designed for through-hole mounting in power conversion and control circuits. It operates as an N-channel enhancement device intended to switch or amplify high-voltage loads within electronic systems while meeting RoHS requirements.
Features and Benefits:
• 500V drain-source rating enables high-voltage switching capability
• 50W power dissipation supports sustained power handling
• 2.5A continuous drain current allows moderate load conduction
• 3Ω maximum RDS(on) reduces conduction losses under light loads
• 24nC typical gate charge permits reasonable switching speed control
• -55°C to 150°C operating range suits wide thermal environments
• 50W power dissipation supports sustained power handling
• 2.5A continuous drain current allows moderate load conduction
• 3Ω maximum RDS(on) reduces conduction losses under light loads
• 24nC typical gate charge permits reasonable switching speed control
• -55°C to 150°C operating range suits wide thermal environments
Applications
• Suitable for SMPS primary-side switching stages
• Ideal for high-voltage lamp and heater controllers
• Used with discrete motor-drive front-ends for low-current motors
• Can be used for hobbyist high-voltage power supplies
• Used for laboratory bench test rigs requiring rugged through-hole parts
• Ideal for high-voltage lamp and heater controllers
• Used with discrete motor-drive front-ends for low-current motors
• Can be used for hobbyist high-voltage power supplies
• Used for laboratory bench test rigs requiring rugged through-hole parts
What package and mounting method does it use?
The device is supplied in a TO-220AB package configured for through-hole fitting with three pins for straightforward PCB attachment and heatsinking.
What gate voltage limits must be observed to avoid damage?
The gate-source voltage must not exceed 20V in either polarity to prevent gate-oxide stress and potential failure.
How does the forward voltage specification affect its use in circuits?
The specified forward voltage of 1.6V indicates the typical voltage drop when conducting under specified test conditions and should be accounted for in thermal and efficiency calculations.
Is this component suitable for automotive temperature extremes?
While it tolerates -55°C to 150°C, it is not designated to meet automotive-standard qualifications.
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