onsemi PowerTrench Type N-Channel Power MOSFET, 79 A, 150 V Enhancement, 3-Pin TO-220AB
- RS stock no.:
- 124-1748
- Mfr. Part No.:
- FDP2532
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 2 175,80
(exc. VAT)
R 2 502,15
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 800 unit(s) shipping from 01 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 43.516 | R 2,175.80 |
| 100 - 200 | R 42.428 | R 2,121.40 |
| 250 - 450 | R 41.155 | R 2,057.75 |
| 500 - 950 | R 39.509 | R 1,975.45 |
| 1000 + | R 37.929 | R 1,896.45 |
*price indicative
- RS stock no.:
- 124-1748
- Mfr. Part No.:
- FDP2532
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220AB | |
| Series | PowerTrench | |
| Mount Type | Through Hole, Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.016Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 310W | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Forward Voltage Vf | 1.25V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Height | 9.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220AB | ||
Series PowerTrench | ||
Mount Type Through Hole, Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.016Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 310W | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Forward Voltage Vf 1.25V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Height 9.4mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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