Vishay IRF9630 Type P-Channel MOSFET, 6.5 A, 200 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 541-2515
- Distrelec Article No.:
- 171-16-460
- Mfr. Part No.:
- IRF9630PBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 unit)*
R 36,87
(exc. VAT)
R 42,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 373 unit(s) ready to ship from another location
- Plus 1,453 unit(s) shipping from 09 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | R 36.87 |
| 25 - 99 | R 35.95 |
| 100 - 249 | R 34.87 |
| 250 - 499 | R 33.48 |
| 500 + | R 32.14 |
*price indicative
- RS stock no.:
- 541-2515
- Distrelec Article No.:
- 171-16-460
- Mfr. Part No.:
- IRF9630PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | IRF9630 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 74W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Forward Voltage Vf | -6.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series IRF9630 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 74W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Forward Voltage Vf -6.5V | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Height 9.01mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Dynamic dV/dt rating
Ease of paralleling
Simple drive requirements
Related links
- Vishay IRF9630 Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF9630PBF
- Vishay IRF9630S Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IRF9630SPBF
- Vishay IRF9630S Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3 IPD25DP06NMATMA1
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay IRFI Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220