Vishay IRF Type P-Channel MOSFET, 1.8 A, 200 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 542-9462
- Mfr. Part No.:
- IRF9610PBF
- Manufacturer:
- Vishay
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Subtotal (1 unit)*
R 31,73
(exc. VAT)
R 36,49
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 24 | R 31.73 |
| 25 - 99 | R 30.94 |
| 100 - 249 | R 30.01 |
| 250 - 499 | R 28.81 |
| 500 + | R 27.66 |
*price indicative
- RS stock no.:
- 542-9462
- Mfr. Part No.:
- IRF9610PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | IRF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -5.8V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series IRF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -5.8V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 9.01mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
The Vishay power MOSFETs technology is the key to advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Dynamic dV/dt rating
Ease of paralleling
Simple drive requirements
Related links
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