N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB Infineon IRF630NPBF

RS stock no.:: 919-5025
Mfr. Part No.:: IRF630NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB Infineon IRF630NPBF

250 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (In a Tube of 50)

R 16,064

(exc. VAT)

R 18,474

(inc. VAT)

Units	Per unit	Per Tube*
50 - 50	R 16,064	R 803,20
100 - 150	R 15,662	R 783,10
200 - 450	R 15,193	R 759,65
500 - 950	R 14,585	R 729,25
1000 +	R 14,001	R 700,05

*price indicative

RS stock no.:: 919-5025
Mfr. Part No.:: IRF630NPBF
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.3 A
Maximum Drain Source Voltage	200 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	82 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	4.69mm
Typical Gate Charge @ Vgs	35 nC @ 10 V
Length	10.54mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	8.77mm

N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB Infineon IRF630NPBF

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