N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK Infineon IRF640NSTRLPBF

RS stock no.:: 831-2853
Mfr. Part No.:: IRF640NSTRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK Infineon IRF640NSTRLPBF

Image representative of range

20 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (In a Pack of 10)

R 24,258

(exc. VAT)

R 27,897

(inc. VAT)

Units	Per unit	Per Pack*
10 - 90	R 24,258	R 242,58
100 - 190	R 23,652	R 236,52
200 - 390	R 22,942	R 229,42
400 - 790	R 22,024	R 220,24
800 +	R 21,143	R 211,43

*price indicative

RS stock no.:: 831-2853
Mfr. Part No.:: IRF640NSTRLPBF
Manufacturer:: Infineon

IRF640NPbF, IRF640NSPbF, IRF640NLPbF, HEXFET Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	150 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	10.67mm
Width	9.65mm
Typical Gate Charge @ Vgs	67 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Height	4.83mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK Infineon IRF640NSTRLPBF

N-Channel Power MOSFET 150V to 600V, Infineon