Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRF640NSTRLPBF

RS stock no.:: 831-2853
Mfr. Part No.:: IRF640NSTRLPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRF640NSTRLPBF

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Subtotal (1 pack of 10 units)*

R 248,29

(exc. VAT)

R 285,53

(inc. VAT)

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In Stock

Plus 50 unit(s) shipping from 29 December 2025
Plus 960 unit(s) shipping from 05 January 2026

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Units	Per unit	Per Pack*
10 - 90	R 24.829	R 248.29
100 - 190	R 24.208	R 242.08
200 - 390	R 23.482	R 234.82
400 - 790	R 22.543	R 225.43
800 +	R 21.641	R 216.41

*price indicative

RS stock no.:: 831-2853
Mfr. Part No.:: IRF640NSTRLPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	67nC
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	150W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	9.65 mm
	Length	10.67mm
	Height	4.83mm
	Distrelec Product Id	304-44-448
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 67nC
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 150W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 9.65 mm
	Length 10.67mm
	Height 4.83mm
	Distrelec Product Id 304-44-448
	Automotive Standard No

COO (Country of Origin):: KR

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NSTRLPBF

This MOSFET is essential for efficient power management across various applications, controlling electrical current flow in circuits to ensure performance and reliability. Its robust specifications make it particularly suitable for automation and electronic systems in contemporary electronics.

Features & Benefits

• N-channel configuration supports enhancement mode operation

• Maximum continuous drain current of 18A

• Peak drain-source voltage of 200V for diverse applications

• D2PAK package designed for surface mount convenience

• Low Rds(on) of 150mΩ reduces energy loss during operation

• High maximum operating temperature of +175°C for various environments

Applications

• Power management in automotive electronics

• Industrial power supplies for automation systems

• Motor control across different sectors

• Renewable energy systems for energy conversion

• High-frequency power inverter designs

What is the maximum drain-source voltage?

The maximum drain-source voltage rating is 200V, providing flexibility for high-voltage applications.

How is heat dissipation managed during operation?

This MOSFET offers a power dissipation capability of 150W, and its package design promotes effective heat management under high loads.

What are the implications of the gate threshold voltage range?

With a maximum gate threshold voltage of 4V and a minimum of 2V, it offers engineers a versatile range for switching applications.

Can this component be used in parallel configurations?

Yes, it can be easily paralleled due to its low on-resistance, making it suitable for high current applications.

How should it be soldered for optimal performance?

The soldering temperature should not exceed 300°C for 10 seconds to ensure proper installation without damaging the MOSFET.