Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

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Bulk discount available

Subtotal (1 tube of 50 units)*

R 2 175,10

(exc. VAT)

R 2 501,35

(inc. VAT)

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Temporarily out of stock
  • 950 unit(s) shipping from 15 January 2026
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Units
Per unit
Per Tube*
50 - 50R 43.502R 2,175.10
100 - 150R 42.414R 2,120.70
200 - 450R 41.142R 2,057.10
500 - 950R 39.496R 1,974.80
1000 +R 37.917R 1,895.85

*price indicative

RS stock no.:
913-3932
Mfr. Part No.:
IRFB4227PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

330W

Typical Gate Charge Qg @ Vgs

70nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

175°C

Length

10.66mm

Height

9.02mm

Standards/Approvals

No

Width

4.82 mm

Automotive Standard

No

COO (Country of Origin):
CN

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