N-Channel MOSFET, 350 mA, 240 V, 3-Pin SOT-223 Infineon BSP89H6327XTSA1

RS stock no.:: 445-2281
Mfr. Part No.:: BSP89H6327XTSA1
Manufacturer:: Infineon

N-Channel MOSFET, 350 mA, 240 V, 3-Pin SOT-223 Infineon BSP89H6327XTSA1

Bulk discount available

Subtotal (1 pack of 5 units)**

R 48 97

(exc. VAT)

R 56 32

(inc. VAT)

465 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

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Units	Per unit	Per Pack**
5 - 20	R 9,794	R 48,97
25 - 95	R 9,55	R 47,75
100 - 245	R 9,264	R 46,32
250 - 495	R 8,894	R 44,47
500 +	R 8,538	R 42,69

**price indicative

RS stock no.:: 445-2281
Mfr. Part No.:: BSP89H6327XTSA1
Manufacturer:: Infineon

Infineon SIPMOS® N-Channel MOSFETs

Infineon SIPMOS® Series MOSFET, 350 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP89H6327XTSA1

This MOSFET is a key component for high-voltage electronic applications, providing effective switching capabilities. Utilising N-channel enhancement mode technology, it is suitable for automotive and industrial electronics, ensuring efficient operation in various conditions. The SOT-223 package enables versatile surface mounting, making it appropriate for contemporary circuit designs.

Features & Benefits

• Maximum continuous drain current of 350mA
• High drain-source voltage rating of 240V for enhanced safety
• Low gate threshold voltage improves sensitivity
• Power dissipation capability of up to 1.8W
• Ideal for logic-level applications with quick switching times

Applications

• Power management in automotive electronics
• MOSFET-based switching power supplies
• Signal amplification in electronic circuits

What is the maximum temperature range for operation?

It operates effectively within a temperature range of -55°C to +150°C, suitable for various environmental conditions.

How does the gate threshold voltage affect performance?

A low gate threshold voltage allows the MOSFET to activate at lower input voltages, enhancing efficiency in battery-operated devices.

What type of mounting is compatible with this device?

This component is designed for surface mounting in a SOT-223 package, facilitating easy integration into PCBs.

Can it handle pulsed drain currents?

Yes, it can manage pulsed drain currents of up to 1.4A, offering additional flexibility for burst power applications.

Is it suitable for use with microcontrollers?

Yes, its logic-level compatibility allows for direct interfacing with microcontroller outputs for effective control.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	350 mA
Maximum Drain Source Voltage	240 V
Series	SIPMOS®
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	6 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.8V
Minimum Gate Threshold Voltage	0.8V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	4.3 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Number of Elements per Chip	1
Length	6.5mm
Width	3.5mm
Automotive Standard	AEC-Q101
Minimum Operating Temperature	-55 °C
Height	1.6mm
Forward Diode Voltage	1.2V