N-Channel MOSFET, 660 mA, 200 V, 3-Pin SOT-223 Infineon BSP297H6327XTSA1

RS stock no.:: 826-9272
Mfr. Part No.:: BSP297H6327XTSA1
Manufacturer:: Infineon

N-Channel MOSFET, 660 mA, 200 V, 3-Pin SOT-223 Infineon BSP297H6327XTSA1

Bulk discount available

Subtotal (1 pack of 50 units)**

R 685 30

(exc. VAT)

R 788 10

(inc. VAT)

250 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

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Units	Per unit	Per Pack**
50 - 200	R 13,706	R 685,30
250 - 450	R 13,363	R 668,15
500 - 700	R 12,962	R 648,10
750 - 950	R 12,444	R 622,20
1000 +	R 11,946	R 597,30

**price indicative

RS stock no.:: 826-9272
Mfr. Part No.:: BSP297H6327XTSA1
Manufacturer:: Infineon

Infineon SIPMOS® N-Channel MOSFETs

Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP297H6327XTSA1

This MOSFET is engineered for efficient switching performance in diverse electronic applications. With a maximum continuous drain current of 660mA and a breakdown voltage of 200V, it is suitable for use in various environments. Its surface mount design simplifies integration into automated systems, making it applicable in both electronic and automotive sectors.

Features & Benefits

• N-channel configuration improves switching efficiency
• Low gate threshold voltage ensures compatibility with logic levels
• High voltage ratings accommodate a range of applications
• Enhanced power dissipation capabilities support effective thermal management
• AEC-Q101 qualification adheres to automotive industry standards
• Compact SOT-223 package supports space-efficient designs

Applications

• Utilised for motor control in automotive systems
• Applied in power management for consumer electronics
• Used in battery management systems for energy regulation
• Employed in signal amplification within communication devices
• Ideal for switch-mode power supplies that improve efficiency

What is the maximum operating temperature for optimal performance?

The component can operate effectively at temperatures up to +150°C, ensuring stability in high-temperature conditions.

How should the MOSFET be installed for best results?

Utilise surface mount technology for installation on a compatible PCB, ensuring correct soldering to maintain connection integrity.

What type of materials is this MOSFET made from?

It is constructed from silicon (Si), which contributes to its performance and reliability across various uses.

Can it withstand severe voltage conditions during operation?

Yes, it has a maximum drain-source breakdown voltage of 200V, making it suitable for high-voltage applications.

How does the gate charge affect its performance?

The typical total gate charge is 12.9nC at 10V, ensuring fast switching times and enhanced circuit efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	660 mA
Maximum Drain Source Voltage	200 V
Package Type	SOT-223
Series	SIPMOS®
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.8 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.8V
Minimum Gate Threshold Voltage	0.8V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	3.5mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	6.5mm
Typical Gate Charge @ Vgs	12.9 nC @ 10 V
Automotive Standard	AEC-Q101
Forward Diode Voltage	1.2V
Height	1.6mm
Minimum Operating Temperature	-55 °C