Infineon SIPMOS Type N-Channel MOSFET, 170 mA, 400 V Enhancement, 4-Pin SOT-223 BSP324H6327XTSA1

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Subtotal (1 pack of 50 units)*

R 527,50

(exc. VAT)

R 606,50

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 200R 10.55R 527.50
250 - 450R 10.286R 514.30
500 - 700R 9.978R 498.90
750 - 950R 9.579R 478.95
1000 +R 9.195R 459.75

*price indicative

Packaging Options:
RS stock no.:
826-9257
Mfr. Part No.:
BSP324H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

170mA

Maximum Drain Source Voltage Vds

400V

Series

SIPMOS

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

25Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.8W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

4.54nC

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Width

3.5 mm

Height

1.6mm

Standards/Approvals

No

Length

6.5mm

Distrelec Product Id

304-44-416

Automotive Standard

AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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