Infineon BSP88 Type N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223 BSP88H6327XTSA1
- RS stock no.:
- 218-2982
- Mfr. Part No.:
- BSP88H6327XTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 118,60
(exc. VAT)
R 136,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,850 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 2.372 | R 118.60 |
| 100 - 100 | R 2.313 | R 115.65 |
| 150 - 200 | R 2.243 | R 112.15 |
| 250 - 450 | R 2.154 | R 107.70 |
| 500 + | R 2.067 | R 103.35 |
*price indicative
- RS stock no.:
- 218-2982
- Mfr. Part No.:
- BSP88H6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 240V | |
| Package Type | SOT-223 | |
| Series | BSP88 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.8W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 240V | ||
Package Type SOT-223 | ||
Series BSP88 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.8W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon small signal / small power MOSFET. All small signal n-channel products are suitable for automotive applications (excluding 2N7002).
Enhancement mode
Pb-free lead plating
RoHS compliant
Related links
- Infineon SIPMOS® N-Channel MOSFET 240 V, 3-Pin SOT-223 BSP88H6327XTSA1
- Infineon N-Channel MOSFET 240 V, 3-Pin SOT-223 BSP129H6906XTSA1
- Infineon SIPMOS® N-Channel MOSFET 240 V, 3-Pin SOT-223 BSP89H6327XTSA1
- Infineon SIPMOS® N-Channel MOSFET 240 V Depletion, 3-Pin SOT-223 BSP129H6327XTSA1
- Nexperia N-Channel MOSFET 240 V115
- Diodes Inc P-Channel MOSFET 240 V, 3-Pin SOT-223 ZVP4424GTA
- Nexperia N-Channel MOSFET 60 V215
- Nexperia NX3008NBKW N-Channel MOSFET 30 V115