Vishay SIS Type N-Channel MOSFET, 178.3 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

R 36 846,00

(exc. VAT)

R 42 372,00

(inc. VAT)

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  • 6,000 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
3000 - 3000R 12.282R 36,846.00
6000 +R 11.975R 35,925.00

*price indicative

RS stock no.:
281-6039
Distrelec Article No.:
301-56-785
Mfr. Part No.:
SISS66DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

178.3A

Maximum Drain Source Voltage Vds

30V

Series

SIS

Package Type

PowerPAK 1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00138Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24.7nC

Maximum Power Dissipation Pd

65.8W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET with schottky diode has applications in synchronous rectification, synchronous buck converter, and DC/DC conversions.

TrenchFET Generation IV power MOSFET

SKYFET with monolithic schottky diode

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