Vishay SIS Type N-Channel MOSFET, 69.4 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS184LDN-T1-GE3
- RS stock no.:
- 268-8342
- Mfr. Part No.:
- SIS184LDN-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 181,26
(exc. VAT)
R 208,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 6,045 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 36.252 | R 181.26 |
| 50 - 95 | R 35.346 | R 176.73 |
| 100 - 245 | R 34.286 | R 171.43 |
| 250 - 995 | R 32.914 | R 164.57 |
| 1000 + | R 31.598 | R 157.99 |
*price indicative
- RS stock no.:
- 268-8342
- Mfr. Part No.:
- SIS184LDN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 69.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Series | SIS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0054Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 69.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Series SIS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0054Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
Related links
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8 SIS184LDN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 100 V, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 8-Pin PowerPAK 1212-8S SISS5708DN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 40 V, 8-Pin 1212-8 SIS9446DN-T1-GE3
- Vishay Quad Silicon Dual N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8 SIS9634LDN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 4-Pin PowerPAK 8 x 8L SIJH5700E-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3