Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

RS stock no.:: 239-5397
Mfr. Part No.:: SISA10BDN-T1-GE3
Manufacturer:: Vishay

Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3

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Subtotal (1 reel of 3000 units)*

R 21 381,00

(exc. VAT)

R 24 588,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

6,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	R 7.127	R 21,381.00

*price indicative

RS stock no.:: 239-5397
Mfr. Part No.:: SISA10BDN-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	104A
	Maximum Drain Source Voltage Vds	30V
	Series	SISA10BDN
	Package Type	PowerPAK 1212-8PT
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0036Ω
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	11.7nC
	Maximum Power Dissipation Pd	63W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	3.3mm
	Width	3.3mm
	Height	0.75mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 104A
	Maximum Drain Source Voltage Vds 30V
	Series SISA10BDN
	Package Type PowerPAK 1212-8PT
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0036Ω
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 11.7nC
	Maximum Power Dissipation Pd 63W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 3.3mm
	Width 3.3mm
	Height 0.75mm
	Automotive Standard No

Vishay SISA10BDN Series MOSFET, 30V Maximum Drain Source Voltage, 104A Maximum Continuous Drain Current - SISA10BDN-T1-GE3

This n-channel MOSFET is a surface-mount power transistor designed for high-current switching in compact electronic assemblies. It operates across a wide temperature range and is suitable for demanding thermal environments where efficient conduction and fast gate response are required. The device is offered in a low-profile package optimised for assembly onto densely populated boards.

Features and Benefits:

• Very low on-resistance 0.0036Ω enables reduced conduction losses
• High continuous drain current 104A supports heavy-load switching
• Drain-source voltage rating 30V allows low-voltage power designs
• Typical gate charge 11.7nC yields quicker gate drive transitions
• Maximum power dissipation 63W permits sustained thermal load handling
• Gate-source withstand 20V provides headroom for diverse drive voltages

Applications

• Suitable for synchronous buck regulator switching stages
• Ideal for motor driver half-bridges in compact inverters
• Used with high-current load switches in server power rails
• Can be used for battery management in high-drain systems
• Suitable for solid-state relays and automotive-style power modules

What mounting method is required for reliable assembly?

It is a surface-mount component in a PowerPAK 1212-8PT format, intended for reflow soldering to a PCB footprint designed for thermal and electrical contact.

How does ambient temperature affect operating capability?

The device is specified to function from -55°C up to 150°C, permitting operation in both sub-zero and elevated-temperature environments with appropriate thermal management.

What type of conduction channel does it use?

It employs an N-type channel, which is suitable for low-voltage, high-current switching applications.

Is the device compliant with environmental restrictions?

It meets RoHS requirements, indicating it lacks restricted hazardous substances under the standard.