Vishay SIS Type N-Channel MOSFET, 178.3 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 229,18

(exc. VAT)

R 263,56

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90R 22.918R 229.18
100 - 240R 22.345R 223.45
250 - 490R 21.675R 216.75
500 - 990R 20.808R 208.08
1000 +R 19.976R 199.76

*price indicative

Packaging Options:
RS stock no.:
281-6040
Mfr. Part No.:
SISS66DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

178.3A

Maximum Drain Source Voltage Vds

30V

Series

SIS

Package Type

PowerPAK 1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00138Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

24.7nC

Maximum Power Dissipation Pd

65.8W

Maximum Operating Temperature

150°C

Length

3.3mm

Width

3.3 mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET with schottky diode has applications in synchronous rectification, synchronous buck converter, and DC/DC conversions.

TrenchFET Generation IV power MOSFET

SKYFET with monolithic schottky diode

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