Vishay SISS Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin 1212-8S SISS52DN-T1-UE3

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Subtotal (1 pack of 5 units)*

R 107,06

(exc. VAT)

R 123,12

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 21.412R 107.06
50 - 95R 20.876R 104.38
100 - 245R 20.25R 101.25
250 - 995R 19.44R 97.20
1000 +R 18.662R 93.31

*price indicative

Packaging Options:
RS stock no.:
279-9999
Mfr. Part No.:
SISS52DN-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

30V

Series

SISS

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0012Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

65nC

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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