Vishay SISS Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin 1212-8S SISS52DN-T1-UE3
- RS stock no.:
- 279-9997
- Mfr. Part No.:
- SISS52DN-T1-UE3
- Manufacturer:
- Vishay
Image representative of range
Subtotal (1 reel of 3000 units)*
R 33 093,00
(exc. VAT)
R 38 058,00
(inc. VAT)
Add 3000 units to get free delivery
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | R 11.031 | R 33,093.00 |
*price indicative
- RS stock no.:
- 279-9997
- Mfr. Part No.:
- SISS52DN-T1-UE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 162A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SISS | |
| Package Type | 1212-8S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0012Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 162A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SISS | ||
Package Type 1212-8S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0012Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
- Vishay SISS Type N-Channel MOSFET 30 V Enhancement, 8-Pin 1212-8S SISS52DN-T1-UE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S
- Vishay SiSS52DN Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS52DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 80 V Enhancement, 8-Pin 1212-8S SISS5808DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 40 V Enhancement, 8-Pin 1212-8S SISS4402DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5108DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3