Vishay SiSS52DN Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS52DN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 177,87

(exc. VAT)

R 204,55

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 17.787R 177.87
20 - 90R 17.342R 173.42
100 - 490R 16.822R 168.22
500 - 990R 16.149R 161.49
1000 +R 15.503R 155.03

*price indicative

Packaging Options:
RS stock no.:
210-5016
Mfr. Part No.:
SiSS52DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

SiSS52DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.95mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

43.2nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.83mm

Width

3.4 mm

Length

3.4mm

Automotive Standard

No

The Vishay N-Channel 30 V (D-S) MOSFET has PowerPAK 1212-8S package type.

TrenchFET Gen V power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Enables higher power density with very low RDS(on) and thermally enhanced compact package

100 % Rg and UIS tested

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