Vishay SiSS52DN Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS52DN-T1-GE3

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

R 185,68

(exc. VAT)

R 213,53

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 14,430 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
10 - 10R 18.568R 185.68
20 - 90R 18.104R 181.04
100 - 490R 17.561R 175.61
500 - 990R 16.859R 168.59
1000 +R 16.185R 161.85

*price indicative

Packaging Options:
RS stock no.:
210-5016
Mfr. Part No.:
SiSS52DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

30V

Series

SiSS52DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.95mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

43.2nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

57W

Maximum Operating Temperature

150°C

Height

0.83mm

Length

3.4mm

Width

3.4 mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 30 V (D-S) MOSFET has PowerPAK 1212-8S package type.

TrenchFET Gen V power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Enables higher power density with very low RDS(on) and thermally enhanced compact package

100 % Rg and UIS tested

Related links